Fabrication of Germanium Inverse Opal Three-dimensional Photonic Crystal by LPCVD 低压化学气相沉积技术制备锗反蛋白石三维光子晶体
The device uses high quality germanium single crystal ( III) as acousto-optic media and y36 ° lithium niobate crystal as piezoelectric transducer. 该器件采用高品质因数Ge单晶(III)作为声光介质,y36°切铌酸锂晶体作为压电换能器。
The method is presented to measure the homogeneity of the refractive index of infrared optical material, germanium crystal, using infrared interferometer with 10.6 μ m wavelength laser as light source. 介绍了运用工作波长为106μm的红外干涉仪测试红外光学材料(锗晶体)的折射率均匀性的方法。
In this paper, the noise equivalant power ( NEP) of optical heterodyne system has been measured with a method based on acousto-optici germanium 'crystal modulator working at Bragg diffraction mode as a frequency shifting device in heterodyne system. 本文介绍了利用工作于Bragg衍射的Ge晶体声光调制器作为外差系统中的频移器来测量外差系统的噪声等效功率(NEP)的方法。
Measurement of the Homogeneity of Refractive Index of the Germanium Crystal Using IR Interferometer 使用红外干涉仪测量锗材料折射率均匀性
A Study on the Low-resistive Pipe inside Single Germanium Crystal 锗单晶内低阻管道现象探讨
Germanium doped silica ( GeO 2-SiO 2) soot is deposited on single crystal silicon substrate by flame hydrolysis deposition. Then this soot is consolidated to form glass in a high-temperature furnace. 用火焰水解法在单晶Si片上沉积了掺Ge的SiO2(GeO2SiO2)粉末,随后在高温炉中将此粉末烧结成玻璃。
A piece of germanium crystal is tested and the deviation distribution of the refractive index is presented. 然后在红外干涉图数据处理中将样品的面形偏差扣除,得到样品折射率的偏差分布.对锗单晶材料进行了实际测试。
Then using this model, combined with the maximum undeformed chip thickness, the relationship between feed rate and cutting depth while germanium crystal cutting in Ductile is obtained. 利用该模型,结合最大未变形切削厚度,得到进给量和切削深度在塑性域切削时两者之间的关系。
The materials for Integrated Circuit ( IC) consist of silicon, germanium, arsenic gallium. Among them, the proportion of single crystal silicon used in IC industry is over 90 percent. 集成电路(IC)所用材料主要有硅、锗和砷化镓等,但目前单晶硅的使用占据全球IC生产的90%以上。
This article was first introduced in the domestic using VB method to growth single germanium crystal substrate material for solar cell. 本文采用VB工艺进行太阳能电池用锗单晶衬底材料的研制。
As key component material of single junction GaAs/ Ge solar cells and GaAs/ Ge matrix solar cells, the quality of germanium single crystal has a direct effect on the properties of space solar cell. 低位错Ge单晶作为单结GaAs/Ge太阳能电池和GaAs/Ge基多结太阳能电池的关键组成材料,其质量的高低直接关系到空间太阳能电池性能的好坏。